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 ESJA09-10
HIGH VOLTAGE DIODE
ESJA09 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin.
Lot No.
(10kV/5mA)
Outline Drawings
Cathode Mark o 2.5 o 0.5
Features
High speed switching Low VF High surge resisitivity for CRT discharge High reliability design Ultra small pakage
27 min.
10
27 min.
Cathode Mark
Type Mark
Applications
Rectification for CRT display monitor high voltage power supply (FBT:Flyback Transformer)
ESJA09-10
57
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items Symbols
White
Units h arc m VRRM 10 n Repetitive Peak Renerse Voltage kV o te gn. e5 IO Ta=25C,Resistive Load o Average Output Current mA s l desi ob w 10mS Sine-half e b wave e IFSM 0.5 Suege Current Apeak peak value led for n du nd Tj che 120 Junction Temperature C e s s omm i 100 Allowable Operation Case Temperature C uct tTcrec do o r N Tstg Storage Temperature s -40 to +120 C ip h T
Condition
ESJA09-10
0 20
7.
Electrical Characteristics (Ta=25C Unless otherwise specified )
Items Maximum Forward Voltage Drop Maximum Reverse Current Symbols VF IR1 IR2 Maximum Reverse Recovery Time Junction Capacitance trr Cj Conditions at 25C,IF=10mA at 25C,VR=10kV at 100C,VR=10kV at 25C,IF=2mA,IR=4mA at 25C,VR=0V,f=1MHz ESJA09-10 35 2 5 0.05 1 Units V A A s pF
ESJA09-10
Characteristics
(10kV/5mA)
Forward characteristic (VF-IF)
Typical
30 10
Reverse characteristic (VR-IR)
Typical Toil=100C
Ta=25C
25 1
IF (mA)
15 0.1 10
5 0.01 10 15 20 25 30 35 40 45 50 2 3 4 5 6 7 8 9 10
IR (A)
20
VF (V)
VR (kV)
100
10
00 Reverse recovery time characteristic (Ta-trr)2 h Avalanche characteristic (Vz-Iz) arc Typical Typical nm IF/IR=2/4mA o Ta=25C 75%Recovery ete ign. l bso des o be new d ule d for d che men s t is ecom c du ot r ro N sp i Th
130 120 110 100
7.
Iz (A)
trr (ns)
90 80 70 60 50 40 30
1
10
11
12
13
14
15
16
17
18
19
20
50
60
70
80
90
100
110
120
130
Vz (kV)
Ta (C)


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